Application Abstract: Fin field-effect transistors(FinFETs)are the mainstreams of current advanced transistors.FinFETs possess low energy-consumption and improve short channel effect that obsesses shrinking planar FETs.This project intends to fabricate FinFETs at National Nano Device Laboratories(NDL),proposing an experimental design with three factors:(1)channel dimensions with different channel lengths,widths and heights,(2)channel orientation with[110]and[100],(3)uniaxial strain films and external mechanical stresses on channel.The design is based on:(1)both channel dimension and orientation of FinFETs determine the electrical characterization and reliability,(2)the application of positive/negative back bias can not adjust threshold voltage of the devices but achieve both performance enhancement and power consumption spontaneously when the back biases are properly operated,(3)orientation of strain engineering can enhance/degrade performance on n-/p-FETs.The electrical reliability will also differ with the abovementioned conditions.The reliability tests will thus use hot carrier injection and positive/negative bias temperature instability to evaluate degradation level and those level under elevated temperatures.
