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Novel transport phenomena in two-dimensional crystals beyond graphene

项目来源

美国国家科学基金(NSF)

项目主持人

Hui Zhao

项目受资助机构

University of Kansas Center for Research,Inc

立项年度

2015

立项时间

未公开

项目编号

1505852

项目级别

国家级

研究期限

未知 / 未知

受资助金额

450000.00美元

学科

未公开

学科代码

未公开

基金类别

Continuing grant

关键词

CONDENSED MATTER PHYSICS ; NANO NON-SOLIC SCI & ENG AWD ; EXP PROG TO STIM COMP RES

参与者AI

郝生财

参与机构AI

北京交通大学

项目标书摘要：Bon-Technical Abstract:Semiconductors have revolutionized out lives.Recently new types of semiconductors,such as single atomic layers of transition metal dichalcogenides and black phosphorus,have become available.This project studies several types of novel transport phenomena in these materials.These transport phenomena,such as collision-free ballistic transport and coherent plasma oscillation,play important roles in nanoscale electronic devices.This project provides fundamental information about these transport phenomena,and reveals rich physics involved in nonequilibrium transport in solids.Furthermore,the studies of several novel spin transport phenomena provide information for application of these materials in spin-based electronics.This project achieves broader impacts by training graduate and undergraduate students,involving K-12 teachers,broadening participation of underrepresented groups,and enhancing research infrastructure on nanotechnology and renewable energy technology.Technical Abstract:The scientific problem studied in this project is nonequilibrium ballistic charge and spin transport in two-dimensional crystals,including transition metal dichalcogenides and phosphorene.The methods and approaches of this project are based on three ultrafast laser techniques:a quantum interference and control technique that can instantaneously inject ballistic charge and spin currents,a differential pump-probe technique that can resolve sub-nanometer motion of electrons,and a second-harmonic generation technique for ultrafast and direct detection of the velocity of electrons.The goals of this project are to understand and control several novel transport phenomena in two-dimensional crystals,such as coherence plasma oscillation,ballistic charge transport,ballistic pure spin transport,spin Hall effect,spin-polarized charge transport,and spin Gunn effect.

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  • 1.2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

    • 关键词：
    • Carbides;MOSFET devices;Organometallics;Optical properties;Metallorganic chemical vapor deposition;Organic chemicals;Characterization techniques;Emerging materials;Large scale synthesis;Materials research;Nitride-based materials;Transition metal dichalcogenides;Two Dimensional (2 D);Wet chemicals
    • Lin, Zhong;McCreary, Amber;Briggs, Natalie;Subramanian, Shruti;Zhang, Kehao;Sun, Yifan;Li, Xufan;Borys, Nicholas J.;Yuan, Hongtao;Fullerton-Shirey, Susan K.;Chernikov, Alexey;Zhao, Hui;McDonnell, Stephen;Lindenberg, Aaron M.;Xiao, Kai;Le Roy, Brian J.;Drndić, Marija;Hwang, James C.M.;Park, Jiwoong;Chhowalla, Manish;Schaak, Raymond E.;Javey, Ali;Hersam, Mark C.;Robinson, Joshua;Terrones, Mauricio
    • 2016年
    • 会议

    The rise of two-dimensional (2D) materials research took place following the isolation of graphene in 2004. These new 2D materials include transition metal dichalcogenides, mono-elemental 2D sheets, and several carbide- and nitride-based materials. The number of publications related to these emerging materials has been drastically increasing over the last five years. Thus, through this comprehensive review, we aim to discuss the most recent groundbreaking discoveries as well as emerging opportunities and remaining challenges. This review starts out by delving into the improved methods of producing these new 2D materials via controlled exfoliation, metal organic chemical vapor deposition, and wet chemical means. We look into recent studies of doping as well as the optical properties of 2D materials and their heterostructures. Recent advances towards applications of these materials in 2D electronics are also reviewed, and include the tunnel MOSFET and ways to reduce the contact resistance for fabricating high-quality devices. Finally, several unique and innovative applications recently explored are discussed as well as perspectives of this exciting and fast moving field. © 2016 IOP Publishing Ltd.

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