项目来源
芬兰研究理事会基金(AKA)
项目主持人
未公开
项目受资助机构
Aalto University
立项年度
2022
立项时间
未公开
项目编号
68709
项目级别
国家级
研究期限
未知 / 未知
受资助金额
133778.00欧元
学科
Physical sciences
学科代码
未公开
基金类别
Research Council of Finland-Targeted Academy projects
关键词
Tiiviin aineen fysiikka ; tietokoneet ; mikrotietokoneet ; supertietokoneet ; computers ; microcomputers ; supercomputers
参与者
未公开
参与机构
CSC-IT Center for Science
项目标书摘要:The ExaFF(Exascale-ready machine learning Force Fields)consortium sets out with the objective to enable the transition of Gaussian approximation potentials(GAPs)to the new GPU-based pre-exascale HPC architectures,LUMI in particular.The transition from CPUs to GPUs represents a major challenge for computational scientists because the existing codes need to be adapted to a different computational logic.ExaFF is a concerted effort between computational physicists and software experts to port parts of the GAP and TurboGAP codes to hybrid architectures.We will also develop the methodologies required to extend the GAP formalism to handle electrostatic interactions efficiently and accurately,and deal with the coupling between ionic and electronic degrees of freedom.These new advances will be used to study the interaction between ions and nanoporous carbon materials for energy-storage applications,and the degradation of semiconductors under heavy radiation environments.
Application Abstract: The ExaFF(Exascale-ready machine learning Force Fields)consortium sets out with the objective to enable the transition of Gaussian approximation potentials(GAPs)to the new GPU-based pre-exascale HPC architectures,LUMI in particular.The transition from CPUs to GPUs represents a major challenge for computational scientists because the existing codes need to be adapted to a different computational logic.ExaFF is a concerted effort between computational physicists and software experts to port parts of the GAP and TurboGAP codes to hybrid architectures.We will also develop the methodologies required to extend the GAP formalism to handle electrostatic interactions efficiently and accurately,and deal with the coupling between ionic and electronic degrees of freedom.These new advances will be used to study the interaction between ions and nanoporous carbon materials for energy-storage applications,and the degradation of semiconductors under heavy radiation environments.