SiGeSn-Nanostructures for Integrated Quantum Well Infrared Photodetectors

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德(略)基(略)F(略)

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K(略) (略)c(略)

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I(略)G(略),(略)o(略)i(略) (略) (略)h(略)r(略)m(略)e(略)c(略)l(略)r(略)c(略)L(略)n(略)I(略)i(略) (略) (略)o(略)i(略)M(略)o(略)k(略)n(略)

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2(略)

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3(略)1(略)4

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E(略)t(略)i(略)e(略)o(略)c(略)s(略)m(略)e(略) (略) (略)c(略)s(略)t(略)a(略) (略)t(略),(略)s(略)T(略)n(略)g(略)h(略)e(略)a(略)l(略)r(略)l(略)g(略)e(略)g

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R(略)a(略) (略)n(略)

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P(略)e(略)r(略)I(略) (略)c(略);(略)i(略)p(略)o(略)s(略)c(略)i(略)n(略)C(略)l(略)i

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项目标书摘要:Th(略)oal is th(略)on and ch(略)ion of CM(略)le quantu(略)ared phot(略)based on (略)Sn hetero(略)operating(略)-infrared(略)frared wa(略)nges with(略)pplicatio(略)ption-bas(略)ing and i(略)ious work(略)V based q(略) infrared(略)tors focu(略)izing SiG(略)ntum well(略),however,(略)sponse ca(略)e with co(略)vices bas(略) heterost(略)ntum well(略)ting the (略)ical para(略)ility of (略) alloy Si(略)end to ex(略)tential o(略)based det(略)emonstrat(略)ell infra(略)tectors w(略)ufacturin(略)t can be (略)directly (略)ignal con(略)ircuits f(略)lopment o(略)pact inte(略)ing solut(略)s end,we (略)erimental(略)ate relev(略)l propert(略) bandgap (略)fsets of (略) alloys,w(略)e,are not(略)ly unders(略) realizat(略)en be bas(略)etical mo(略) experime(略)rom mater(略)to the de(略)ation pro(略)

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